Solid-State Electronics, Vol.46, No.4, 597-599, 2002
Improved current drivability and poly-gate depletion of submicron PMOSFET with poly-SiGe gate and ultra-thin nitride gate dielectric
The electrical properties of poly-SiGe gated PMOSFETs have been investigated and compared to the conventional poly-Si gated device. Both types of PMOSFETs use ultra-thin nitride gate dielectric. Poly-SiGe gated devices exhibit 10% higher inversion capacitance, improved subthreshold properties, and superior current drivability. The improvements are contributed to the suppression of the poly-gated depletion effect and the enhanced carrier mobility. (C) 2002 Elsevier Science Ltd. All rights reserved.