The work contains results of investigation on the phenomena of the field induced electron emission and photo-emission in thin doped oxide layers (10 to 200 nm) In2O3 and SnO2 (ITO-indium tin oxide). These layers have been deposited onto both surfaces of a glass using a constant-current ion sputtering method. A negative voltage U-pol, to the field electrode created the internal electric field. The studies were performed in the vacuum of the order 10(-6) Pa. As a result of applying Up., and illumination the photoelectrons are recorded as voltage pulses in the multichannel pulse amplitude analyzer. Electron emission yield dependence on the intensity of an internal field and illumination was measured. With increasing U-pol, the count frequency n of pulses grows monotonically. The exponential dependence n = f(U-pol) has been found. A phenomenological model of the ITO layer partition on the two zones depleted and enhanced of carriers is given in order to explain the observed effects. (C) 2002 Elsevier Science Ltd. All rights reserved.