Antimony-doped tin oxide (SnO2:Sb) single crystalline films have been prepared on alpha-Al2O3 (0001) substrates by metal organic chemical vapor deposition (MOCVD). The antimony doping was varied from 2% to 7% (atomic ratio). Post- deposition annealing of the SnO2: Sb films was carried out at 700 - 1100 degrees C for 30 min in atmosphere ambient. The effect of annealing on the structural, electrical and optical properties of the. lms was investigated in detail. All the SnO2: Sb. lms had good thermal stability under 900 degrees C, and the 5% Sb-doped SnO2 film exhibited the best opto-electrical properties. Annealed above 900 degrees C, the 7% Sb- doped SnO2 film still kept high thermal stability and showed good electrical and optical properties even at 1100 degrees C. (C) 2008 Elsevier B. V. All rights reserved.