Bulk Germanium-Silicon single crystal alloys have been grown using a novel crystal growth technique called Axial Heat Processing (AHP). The technique includes an immersed baffle which divides melt into two regions, decreases the melt height, and distributes the heat over the entire growth interface. Two silicon doped germanium single crystals with 12 atomic percent concentration have been grown by the AHP method at 2 mm/h velocity, and two single crystals with identical growth parameters have also been grown using the Vertical Bridgman technique to set a base for comparison between the crystals grown by the two techniques. The effect of the processing variables on segregation and single crystal quality is investigated. (C) 2010 Elsevier B.V. All rights reserved.