Journal of Crystal Growth, Vol.318, No.1, 1062-1066, 2011
Vertical Bridgman growth and characterization of CdMnTe crystals for gamma-ray radiation detector
CdMnTe (CMT) has been recently considered to be a good candidate as a promising material for the manufacture of room-temperature nuclear radiation detectors due to its better lattice strengthening, wider band gap energy and low segregation potential. This paper reports the recent progress of detector-grade CMT crystals in Northwestern Polytechnical University. CdMnTe:In ingots with diameter of 30 mm were grown using a Modified Vertical Bridgman (MVB) method. Current-voltage measurements were performed on single element planar configuration structure with Au electrode and the obtained resistivity of CMT samples was up to 6.19 x 10(10) Omega cm. PL spectra and IR transmittance measurement on the samples were revealed that the as-grown CMT crystal possess of high quality. IR microscope showed that the Te inclusions in CMT are 10-20 mu m in diameter and within the range 1 x 10(4)-3 x 10(4) cm(-3) in concentration. The (241)Am gamma-ray spectral was obtained for the CMT single planar detector with the energy resolution of 12.38% of the 59.5 key peak. The mobility-lifetime products for the electron and hole of the as-grown CMT crystals were evaluated to be 1.22 x 10(-3) cm(2) V(-1) and 3.0 x 10(-5) cm(2) V(-1), respectively. (C) 2010 Elsevier B.V. All rights reserved.
Keywords:Characterization;Radiation;Bridgman technique;Cadmium compounds;Semiconducting II-VI materials