| 학회 |
한국화학공학회 |
| 학술대회 |
2005년 가을 (10/21 ~ 10/22, 인하대학교) |
| 권호 |
11권 2호, p.2485 |
| 발표분야 |
재료 |
| 제목 |
Atomic scale etching of poly-Si in inductively coupled Ar and He plasmas |
| 초록 |
For fabrication of novel Si-based devices, device structures with a high aspect ratio are increasingly required. The reactive ion etching is widely used for defining fine features, but energetic ions generated in a plasma are known to cause serious radiation damages. In a low-energy ion system, isotropic chemical reactions caused by neutrals become predominant and the deterioration of the pattern definition will occur. Therefore, a new concept of directional etching with minimum reaction energy is needed. In this work, atomic scale etching of poly-Si was performed by using a cyclic process of etchant adsorption and ion beam irradiation. This process is the same as the so-called "atomic layer etching" of single crystalline Si. Cl2 was used as an etchant gas, and Ar or He ions generated in an inductively coupled plasma was used as an ion beam. It was found that there exists a range of bias voltages where the etch rate is nearly constant. This range of bias voltages for He plasmas was wider than that for Ar plasmas. |
| 저자 |
김태호1, 민재호2, 문상흡2, 윤형진1, 신치범1, 김창구1
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| 소속 |
1아주대, 2서울대 |
| 키워드 |
ALET; etching; etch; Plasma; Si; Poly-Si
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| E-Mail |
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| 원문파일 |
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