| 학회 | 한국화학공학회 |
| 학술대회 | 2006년 가을 (10/27 ~ 10/28, 고려대학교) |
| 권호 | 12권 2호, p.2335 |
| 발표분야 | 이동현상 |
| 제목 | Gas Injector Effect on Gas Flow Uniformity in Inductively Coupled Plasma Etcher |
| 초록 | Gas injector effect on gas flow uniformity in inductively coupled plasma (ICP) has been studied. CFD-ACE+ commercial code was used for the flow simulation inside ICP chamber. For the simple problem definition, we make an assumption for the etchant mixture to an Ar flow; ~600sccm based on the oxide etching process recipe. The flow effect is focused and the plasma model is not included in this work. Real dimension of plasma chamber 3D model has been used. Simulated chamber has two different injecting points; center and side injectors. Center injector is located at the top center of a chamber and side injector is located at the side wall of a chamber for improving wafer edge uniformity. The gas injector effect on gas density uniformity at the 200mm wafers area is analyzed and gas density was compared to the oxide etch and photoresist blanket ash rate uniformity results. |
| 저자 | 이재원1, 채희엽1, 박근주2, 채환국3 |
| 소속 | 1성균관대, 2Quantum Plasma Service Co., 3Ltd |
| 키워드 | CFD; Plasma Etching; Gas Injector |
| 원문파일 | 초록 보기 |
