| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
B. Nano materials and processing Technology(나노소재기술) |
| 제목 |
Adhesion properties of ruthenium thin films deposited by remote plasma atomic layer deposition |
| 초록 |
Recently, Ru has got much research attention for seedless Cu diffusion barrier material because Ru can be directly electro-platable and be deposited easily by atomic layer deposition (ALD). However, Ru film which was deposited by ALD exhibits poor adhesion with metal-nitride or SiO2. In the present study, Ru thin films were deposited by remote plasma ALD using a bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)2] as a precursor and an ammonia plasma as a reactant on SiO2 substrate with various treatments. Tape tests were performed to examine adhesion properties of all the Ru films. The Ru films on untreated SiO2 substrate were sometimes detached and the detaching probability was increased as deposition temperature increased. The Ru films deposited at 400 ˚C on thermally treated SiO2 at 600 ˚C in in-situ RTA were totally detached and the films on Ar plasma treated SiO2 were partially detached. But the Ru films deposited at 300 ˚C on SiO2 substrates with same treatments were seldom detached. Auger electron spectroscopy (AES) survey data shows that the remaining area after film detached in vacuum did not contain any ruthenium concentration and just SiO2. The change of surface energy of SiO2 substrate caused by Ar plasma treatment and thermal treatment at 600 ˚C, were investigated by sessile drop test, and the results of surface polar components were decreased on both treated substrates. AES depth profiles and their spectra analysis were examined. The kinetic energy shift of Ru MVNIIINV (236 eV) of well detached samples were about 1.5 eV or larger and the energy shift of rarely detached samples were under 1 eV compare to Ru bulk spectra. Some of the samples were annealed at 600 ˚C and adhesion properties were enhanced and were not detached. |
| 저자 |
박태용, 최동진, 최학영, 전형탁
|
| 소속 |
한양대 |
| 키워드 |
Ru; ruthenium; adhesion; AES
|
| E-Mail |
|
