| 학회 | 한국재료학회 |
| 학술대회 | 2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 | 11권 2호 |
| 발표분야 | 반도체재료 |
| 제목 | 초크랄스키 실리콘 결정 결함 영역의 비파괴 분석 연구 |
| 초록 | Grown-in defects in CZ silicon crystal have recently become serious problems for the device fabrication. This work investigates the determination of grown-in defects distribution in silicon using non-destructive methods, based essentially on electrical and optical techniques. Regarding electrical technique, minority carrier lifetime measurements by means of surface photo voltage to determine the region of grown-in defects in P-type silicon wafers is evaluated, taking advantage of the activity of grown-in defects as recombination centers for minority carriers. Regarding optical techniques, the scanning infra-red microscope is considered, which can detect grown-in defects in silicon exploiting their effectiveness as light scattering centers. In this paper, we explain the comparison between Lifetime and SIRM results. SIRM is the new worthy method for investigation of grown-in defects distribution in CZ silicon. |
| 저자 | 배기만, 홍병섭, 이보영 |
| 소속 | LG 실트론 |
| 키워드 | SIRM; Lifetime; Grown-in defect |
