| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Study of Slurry pH and Oxidizer on Ge-doped SbTe for High Speed PRAM CMP |
| 초록 | Chemical Mechanical Polishing(CMP) has been used widely to achieve both local and global planarization. According to the target material, numerous conditions need to be considered and controlled such as pad, slurry, pH, abrasive, chemical additive, etc. Ge-doped SbTe (Ge-ST) is phase changing material and the key material of the of the phase change random access memory (PRAM), which is one of the promising candidates for the future semiconductors. For manufacturing of PRAM device below 30 nm design rule, adequate CMP technique for Ge-ST is indispensable. Because electrostatic interactions are strongly influenced by the pH of the slurry, we firstly investigated the effect of pH in slurry using wet-etching test. Secondly, we analyze the H2O2 as an optimum oxidizer for Ge-ST among currently used oxidizers using X-ray Photoelectric Spectroscopy (XPS), Scanning Electron Microscope(SEM), and Transmission Electron Microscope (TEM) measurements. Finally, we concluded that pH 4 slurry is suitable to maintain sufficient material removal rate(MRR) and overcome an adhesion problem simultaneously. Also, H2O2 is an oxidizer that makes stable oxidizing layer, and it can effectively prevent excessive Etching and Polishing, and reduce corrosion pits. Acknowledgments This work was supported by the IT R&D program of MKE/KEIT. [KI002189, Technology Development of 30 nm level High Density Perpendicular STT-MRAM]. We thank SK Hynix Inc. and Sumco Corp. for helping with the experiments. |
| 저자 | Jun-Hee Shin1, Jong Woong Baek2, Sang Hwa Woo3, Jin Hyung Park4, Jea Gun Park1 |
| 소속 | 1Department of Electronic Engineering, 2Hanyang Univ., 3Seoul 133-791, 4Korea |
| 키워드 | pH; GST; PRAM; CMP |
