| 초록 |
The resistance of ultralow-k dielectrics (ULKs) to plasma is very important during their processing such as reactive ion etching in semiconductor industries. These plasma-induced damages cause the loss of carbon and then formation of silanol groups which lead to higher dielectric constant. Therefore, we have developed the three kinds of carbon-bridged OSG matrices and compared their effect on plasma resistance: BTESE25, BTESP25 and BTESB25 by copolymerization of methyl trimethoxysilane (75 mol%) with 1,2-bis(triethoxysilyl) ethane (25 mol%), 1,3-bis(triethoxysilyl) propane (25 mol%) and 1,4-bis(triethoxysilyl) butane (25 mol%). Increase in carbon contents of the OSG matrices resulted in increased number of bridged carbon atoms, which were confirmed by XPS. Nanoporous ULKs were obtained by introducing trimethoxysilyl xylitol (TMSXT) as a reactive porogen to the OSG matrices. They showed highly improved PID resistance by 33.9 ~ 68.8 % with the more carbon contents at k of＜ 2.25. |
