| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Investigation of Corrosion Inhibitor Induced Particle Contamination on Post Cu CMP Surface |
| 초록 | The role of inhibitor during Cu CMP process is critical. The major issues related to inhibitor are particle contamination and organic residue formation during post-CMP cleaning process. In this work, the contamination of particles as function of inhibitor type was investigated. The major root cause for the particle contamination with respect to inhibitor could be related to wettability of copper surface. Several inhibitors were tested and found that inhibitors causing higher hydrophobicity to copper surface produces less particle contamination. In this study tells with the contamination by residual particles in the slurry after the CMP process. During CMP, under aggressive chemical environment, Cu film is dissolved and corrosion inhibitor protects the lower lying areas of Cu surface via forming a strong Cu-inhibitor complex in reaction with Cu metal. However, the presence of this inhibitor causes several kinds of contaminations, especially particle contamination and organic residue, after CMP process. From the post CMP cleaning point of view, it is important to minimize the particle contamination and residues of inhibitor complexes which remained after CMP process. In this work, it was intended to find the correlation between wettability of Cu caused by the inhibitors and particle contamination produced. |
| 저자 | 이찬희, 류헌열, 황준길, 조휘원, 이유진, 김태곤, 박진구 |
| 소속 | 한양대 |
| 키워드 | Corrosion inhibitor; particle contamination; wettability |
