| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 |
30권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Negative Molecular Resists with Calix[4]resocinarene for DUV Lithography |
| 초록 |
A negative working molecular resists based on fully epoxy-protected tetra-Cmethylcalix[4]resorcinarene (epoxy C-4-R) has been developed. Epoxy C-4-Rs were prepared by the reaction of C-4-R with epichlorohydrin in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine positive image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm2 of DUV-light by the contact mode. |
| 저자 |
오태환, 김진백
|
| 소속 |
한국과학기술원 |
| 키워드 |
molecular resist; calix[4]resocinarene; lithography
|
| E-Mail |
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