| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Dependency of conductivity on Ge concentration in SiGe grown on Silicon-on-insulator |
| 초록 | SiGe-on-insulator (SGOI) using SiGe buffer layer is being regarded as a key material to merge advantages of Si-on-insulator (SOI) technologies. SGOI is generally regarded to be the most appropriate stressor for strained-Si epitaxial layer because its larger lattice parameters compared to Si as well as excellent compatibility with the present silicon integrated circuit technology. In addition, the SGOI can be solved the reduction of mobility in bulk Si due to quantum effect for advanced CMOS devices. In this study, therefore, we investigated the dependency of conductivity on Ge concentration in SiGe grown on Silicon-on-insulator. We found that Ge concentration is increased with increasing the conductivity by diffusion of Ge through SiGe to Si layer during oxidation process. And also, it’s expected the enhanced carrier mobility of strained Si grown on relaxed SiGe layer. *This work was financially supported by Korea Ministry of Science & Technology through the NRL program. |
| 저자 | Won-Kyung Park, Min-Hee Yun, Tae-Hyun Kim, Gon-Sub Lee, Jea-Gun Park |
| 소속 | 한양대 |
| 키워드 | SiGe-on-insulator(SGOI); Relaxed SiGe; Strained Si; Conductivity; Ge concentration |
