| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Effect of Particle Agglomeration by Air Bubble during Tungsten (w) CMP Process |
| 초록 | Application of tungsten (W) CMP (chemical mechanical planarization) has become one of the most important semiconductor processes during the fabrication of various interconnected device structures used in MOL (middle of line) and RMG (replacement metal gate). During W CMP process, use of abrasive slurry can produce agglomerates and generate many surface defects in terms of particle contamination and scratches which can adversely affect the next step process via minimizing device yield and efficiency. Hence in this work, the root cause for the particle agglomeration phenomenon was studied. W CMP involves the continuous removal of WO3 film formed on W surface in reaction of W film with catalyst Fe(NO3)3 and oxidizer H2O2. It was observed that presence of Fe(NO3)3 catalyst can decompose H2O2 into O2 bubbles via heat generated during CMP process. This in-situ generated O2 gas could be a possible cause of particle contamination and defects formation due to its interaction with abrasive particles during W CMP process. The inhibition test to prevent O2 bubbles was also performed using bubble suppressor. Analysis of CMP and contamination test including with and without bubble suppressor was also done in order to verify the efficacy of suitable bubble suppressor for reduction in defects. |
| 저자 | 김동규, 정연아, 한광민, 한소영, 진승완, Nagendra Prasad Yerriboina, 김태곤, 박진구 |
| 소속 | 한양대 |
| 키워드 | O<SUB>2</SUB> gas bubble; Particle agglomeration; W CMP defects |
