| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Comparison of Critical Parameters (TMR, Δ) for Perpendicular-Magnetic Tunneling Junction implementing Low Cobalt CFB Free and Pinned layer |
| 초록 | Recently, perpendicular-spin-transfer torque magnetic random access memory (p-STT MRAM) has received considerable attention as the next-generation memory. It has fast write and read speed like dynamic random access memory (DRAM) with an non-volatility. Furthermore, it also has great endurance (＞1014), less electric energy consumption to maintain its data (~1 pJ/bit) and a cell size of less than 10 nm. However, it is not easy to commercialize due to not performance well at back end of line temperature of 400oC to be manufactured into the market. In our study, we investigated to compare the two device parameters on CoFeB/MgO based p-MTJ by implementing a low cobalt CoFeB(Co0.07Fe0.63B0.3) free-layer and pinned layer. The new structure consists of low cobalt CoFeB free and pinned layers, with the thickness of the free and the pinned layers being 1.3nm and 1.23nm(wedge 0.79-1.4) respectively. According to Slater-Pauling Curve, it is possible to increase Ms by controlling ratio of Co and Fe. In this study, we compare the single MTJ using Co0.07Fe0.63B0.3 and normal single MTJ. The TMR ratio was estimated by using current-in-plane tunneling (CIPT) technique at room temperature. TMR ratio of the p-MTJ with Co0.07Fe0.63B0.3 is increased from 93.66% to 115.84% compared with the a normal MTJ. It’s probably because the high Ms helps to increase Δ of MTJ. In our presentation, we will report the effect of Co0.07Fe0.63B0.3 p-MTJ by examining the static magnetization behavior and TMR ratio characteristics. In addition, we will review the mechanism of why the critical parameters of the p-MTJ are varied by the new ratio of Co and Fe. Acknowledgment This work was supported by a Basic Science Research Program grant from the National Research Foundation of Korea (NRF) funded by the Korean government (MSIP) (No. 2017R1A2A1A05001285) and the Brain Korea 21 PLUS Program in 2014. |
| 저자 | 전한솔, 이동기, 최진영, Kondo Kei, 백종웅, 박재근 |
| 소속 | 한양대 |
| 키워드 | <P>STT-MRAM; Magnetic tunneling junction; Spin valve</P> |
