| 학회 |
한국화학공학회 |
| 학술대회 |
2006년 봄 (04/20 ~ 04/21, 대구 인터불고 호텔) |
| 권호 |
12권 1호, p.936 |
| 발표분야 |
재료 |
| 제목 |
Fabrication and thermal stability of W, WNx diffusion barriers in the low-k integration structure |
| 초록 |
The Cu/barrier/low-k SiCOH structures were fabricated and their thermal stability was investigated. SiCOH films were deposited by plasma-enhanced chemical vapor deposition using divinyldimethylsilane (DVDMS) and O2. As barrier materials, tungsten and tungsten nitride films were deposited by chemical vapor deposition (CVD) using W(CO)6 and NH3 sources at 450 °C. Variations of SEM and XRD results of Cu/barrier/low-k SiCOH were examined depending on the annealing temperature. Both results showed that W and W2N film blocked the Cu diffusion up to 500 °C and above 600 °C, WO3 nanorods were grown from the sample surface. It is thought that the thermal stability of the Cu/barrier/SiCOH/Si structure is closely related with the thermal destruction of the low-k SiCOH films. |
| 저자 |
전성호, 용기중
|
| 소속 |
포항공과대 |
| 키워드 |
tungsten; tungsten nitride; diffusion barrier; low-k integration
|
| E-Mail |
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| 원문파일 |
초록 보기 |
