| 초록 |
Recently, various kinds of attempts have been made to avoid the formation of undesirable components during the formation of main target materials. One of them is the incorporation of target materials to inert media such as SiO2. However, the SiO2 should be modified to be applied in a specific target usage and field. To explore the new functions and characteristics of SiO2 powders, Zn2+ were doped into the surface of SiO2 powders. A MDFR was employed to prepare SiO2:Zn powders continuously and effectively. Effects of continuous UC, UMB and CZn on the structural, optical and electrical properties of SiO2:Zn powders were investigated. Some parts of Si4+ in the host materials were substituted by Zn2+. The substitution was promoted by increasing in UMB. The substitution of Si4+ by Zn2+ could reduce the bandgap energy between the conduction band of Si4+ and the valence band of O2p. The increase in UMB led to the reduction of bandgap energy of SiO2:Zn powders by forming an intrinsic energy level such as acceptor level to the conduction band. SEM analysis showed that the SiO2:Zn powders were spherical and highly porous with extremely wrinkled and furrowed, with increasing UMB and CZn. |
