| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 |
Electrical properties for CuAlSe2 layers grown by hot wall epitaxy method |
| 초록 |
The CuAlSe2(112)/GaAs(100) heteroepitaxial layers were grown by the hot wall epitaxy (HWE) method. From the measurements of the Laue patterns and the double crystal X-ray diffraction, the CuAlSe2 epilayer was confirmed to the epitaxially grown layer along the ＜112＞ direction onto a GaAs (100) substrate. The Hall mobility and carrier density of the CuAlSe2 epilayer at 293 K were estimated to be 295 cm2/V•sec and 9.24 × 1016 cm-3, respectively. This mobility is approximately one order higher than the reported value. From the temperature dependence of the Hall mobility, the scattering at a high temperature range was mainly due to the acoustic mode of lattice vibration. The scattering at a low temperature was the most pronounced range due to the impurity effect. |
| 저자 |
Kijung Lee1, Kwangjoon hong2
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| 소속 |
1Graduate school Chosun Univ., 2Department of physics Chosun Univ. |
| 키워드 |
hot wall epitaxy (HWE); Hall mobility; carrier density; impurity effect
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| E-Mail |
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