| 학회 |
한국고분자학회 |
| 학술대회 |
2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 |
30권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Relationship between the acid diffusion length and line edge roughness in photoresists |
| 초록 |
Lithography technology has played a dominant role in the growth of the semiconductor business and determined the design rule of circuits in devices. The pattern shrink competition between various device makers as well as scanner makers was dependent on their ability of lithography basic skills. According to the latest result about the circuit whose pattern size was around 30nm from Intel Corporation, the line edge roughness was the biggest issue that should be solved to make a working device. In this study to understand the basic relationship between the characteristics of photoresists and the line edge roughness of the pattern, model resists was formulated and investigated. The experimental result showed that line edge roughness was different depending on the polymer structures of model resists. Acid diffusion length of each sample was measured indirectly and the diffusion coefficient was obtained. This found that the difference in acid diffusion length of each model photoresists was the main reason for the line edge roughness. The basic reason for the different acid diffusion length in various photoresists was suggested at the end. |
| 저자 |
김재현, 김영호, 김태성
|
| 소속 |
삼성전자 |
| 키워드 |
semiconductor; lithography; photoresist; acid diffusion length; line edge roughness
|
| E-Mail |
|
