| 학회 |
한국공업화학회 |
| 학술대회 |
2016년 봄 (05/02 ~ 05/04, 여수 엑스포 컨벤션) |
| 권호 |
20권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
The effect of HfO2 Films using Atomic Layer Deposition in accordance with thermal decomposition temperature of Tetrakis(ethylmethylamino)hafnium [TEMAHf] |
| 초록 |
By using Atomic Layer Deposition (ALD), Hafnium oxide (HfO2) thin films have been used as dielectric material due to many attractions such as excellent leakage properties because of its wide band gap (~5.8eV) and thermal stability in contact with Si substrate. In ALD process, Hafnium precursor needs suitable heating due to relatively low vapor pressure. However, heating temperature of precursor (Ts) is diverse. So, in this research, we experiment thermal decomposition in accordance with Ts and identify the properties of HfO2 thin films deposited at respective Ts, only change Ts in other conditions equal. Properties of deposited thin films are analyzed with X-ray photoelectron spectroscopy (XPS), grazing incidence X-ray diffraction (GIXRD), and atomic force microscope (AFM). |
| 저자 |
오남근1, 안종기1, 강고루1, 김소연2, 김진태1, 윤주영1
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| 소속 |
1한국표준과학(연), 2충남대 |
| 키워드 |
TEMAHf; Atomic Layer Deposition; thermal decomposition; FTIR; QMS; Precursor
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| E-Mail |
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