| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Method of the high efficiency of reflection GaN layer for the lighting emitting diode structure including GaN/AlGaN films for the distributed bragg reflector. |
| 초록 |
Distributed Bragg Reflectors(DBRs) have been demonstrate for enhance the high efficiency of reflection from the Lighting Emitting Diodes(LED). Using the DBRs can control to reflect or transmittance the specific wavelength. We have studied the GaN LED structure including GaN/AlGaN DBRs, and the dependence of Al composition and V/III ratio of GaN/AlGaN films for DBRs. In sequence, GaN/AlGaN DBRs were deposited on the sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Following this process, the diverse analyzing methods such as field emission scanning electron microscopy (FE-SEM), atomic-force microscopy (AFM) were confirm the quality of the GaN epi-layer and GaN /AlGaN films. We measured the intensity of reflectance and crystalline on the substrates by UV-visible and X-Ray Diffraction (XRD). For compared the results, we analyzed the simulation result about the reflectivity of the GaN LED structure by the matlab. In conclusion, we figure out the dependence of Al composition and V/III ratio of GaN/AlGaN films for DBRs, also figure out the result of the high efficiency of reflection from the specific wavelength through the GaN LED structure. |
| 저자 |
안민주, 김대식, 정우섭, 조승희, 김철, 고현아, 이두원, 변동진
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| 소속 |
고려대 |
| 키워드 |
GaN; AlGaN; LED; DBR; V/III ratio; Al composition
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| E-Mail |
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