| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Depth Resolved Band alignments of TiN/ZrO2 and TiN/ZAZ DRAM Capacitors |
| 초록 | As high dielectric constant (k) dielectrics are implemented to increase charge storage capacity per area of metal-insulator-metal (MIM) capacitor cell in dynamic random access memory (DRAM), it is extremely crucial to ensure the effective controllability on a leakage current through ultrathin high-k dielectrics. In this presentation, I will talk the interface band alignment of TiN/ZrO2 or TiN/ZrO2-Al2O3-ZrO2(ZAZ) structures by analyzing conduction band offset (CBO) and valence band offset (VBO) at the interface of electrode/dielectric layer using depth-resolved spectroscopy techniques. At the center of interface defined by chemical composition depth profile, CBO was determined at 2.03 eV for ZrO2 and 2.57 eV for ZAZ. The process induced subcutaneous TiON at the interface was identified and played an important role in creating sub-band states. Based on combined analyses on both intrinsic and sub-band structures, the band alignment model is proposed. It was confirmed that the Al2O3 layer in ZAZ leads to the lowering of Fermi energy level or p-doping effect, increasing CBO and the tunneling barrier in metal-insulator-metal capacitors. |
| 저자 | 이상연, 유일한, 박유민, 서형탁 |
| 소속 | 아주대 |
| 키워드 | DRAM Capacitor; ZrO2; ZAZ; Band alignment |
