| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Influence of Chloride Ion on Tungsten (W) and Silicon dioxide (SiO2) films for the W Chemical Mechanical Planarization (CMP) process |
| 초록 | As design rule of semiconductor devices is reduced, tungsten (W) has been widely used as metal wiring, or plug in manufacturing processes of the semiconductor devices. Thus, W chemical mechanical planarization (CMP) process was required to form the W wiring or plug. In general, colloidal silica (SiO2) has been was applied as the abrasive in W CMP slurry. However, it has been reported that dishing and erosion of wiring generated from CMP process induce the fatal problems such as the increase of resistance and heat generation. Erosion and dishing can be reduced by adding chemical additives or controlling Material Removal Rate (MRR), which is related to selectivity, of W and SiO2 films. In particular, we investigated influence of the planarization of the W and SiO2 films according to the chloride ion concentration and source type of chloride ion; i.e., monomer and polymer. We proposed a novel W-film CMP slurry using HCl as monomer source and a cationic polymer as polymer source (i.e., poly diallyldimethylammonium chloride(PDDA)) and ZrO2 abrasives with 60-nm-diameter where the ferric based catalyst, corrosion inhibitor, and pH titrator are fundamentally included in W CMP slurry. Because the more PDDA concentration is higher, the more slurry dispersibility become worse, we used the concentration of PDDA from 0 wt% to 0.02 wt%. Firstly, we investigated the dependency of the PDDA concentration on the MRR of W and SiO2 films. The MRR of W film has no significant difference when the concentration from 0 to 0.02 wt%. However, MRR of SiO2 film maximized at a specific concentration; i.e., 0.015 wt%. Secondly, the dependency of the HCl concentration on the MRR of W and SiO2 films. The MRR of W film maximized at a specific concentration; i.e., 0.03 wt%. While MRR of SiO2 film consistently increased from 290 to 438 Å/min when the concentration from 0 to 0.07 wt%. In our presentation, we will review the detailed mechanism which CMP performances in W film and SiO2 films CMP using the slurry which containing chloride ion. |
| 저자 | Jae-Young Bae1, Soo-Bum Kim2, Eun-Bin Seo3, Haneol Choi4, Jin-Hyung Park1, Jea-Gun Park2 |
| 소속 | 1aAdvanced Semiconductor Materials & Device Development Center, 2Hanyang Univ., 3Seoul, 4Korea |
| 키워드 | CMP; tungsten; silicon dioxide; chloride ion |
