| 초록 |
Inductively coupled plasma reactive ion etching of ZnO using C2F6-based plasma was investigated. etch rates, side angle and root mean square(RMS) roughness are studied as a function of ICP power, bias power and working pressure. Etch rates, RMS roughness and surface contamination of etched ZnO are obtained by Scanning electron microscopy(SEM), atomic force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS). It is shown that compared with pure C2F6- and C2F6/CH4-based gas mixtures, C2F6/CH4 gas result in high etch rate, vertical side wall and smooth surface, indicating that CHx radicals react with ZnO and form volatile compound such as (CH3)yZn, but resulted in increasing contamination in the chamber. |
