| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 가을 (10/24 ~ 10/26, 부산 BEXCO) |
| 권호 |
18권 2호, p.2219 |
| 발표분야 |
이동현상 |
| 제목 |
GPU based 3D feature profile simulation for ultra-high deep etch process in inductively coupled fluorocarbon plasmas |
| 초록 |
Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high deep contact hole without anomalous behaviors such as sidewall bowing, and twisting profile. However, most of the process development still depends on the empirical routs due to the inherent complexities of plasma processes. As a part of an effort to address this issue, we have developed 3D topology simulator using the multiple level set based moving algorithm, ballistic transport module and surface reaction module. Especially, we demonstrate that the ballistic transport calculation requiring the time consumable computations are improved drastically by GPU based numerical computation, leading to the real time computation. Furthermore, a fluorocarbon plasma-surface kinetic modeling was performed using robust surface reaction researching tools, CANTERA, for plasma etching process under inductively coupled fluorocarbon plasmas. Finally, we illuminate critical aspects of ultra-high aspect contact etching through real-time and realistic 3D feature profile simulation for ultra-high aspect contact hole etching under fluorocarbon plasma. |
| 저자 |
천푸름1, 이세아1, 육영근1, 최광성1, 조덕균1, 유동훈1, 장원석2, 권득철2, 임연호1
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| 소속 |
1전북대, 2국가핵융합(연) |
| 키워드 |
GPU; 3D feature profile simulation; ultra-high deep etch process; fluorocarbon plasmas
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| E-Mail |
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| 원문파일 |
초록 보기 |
