| 초록 |
The Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE) of ZnO using C2F6 and BCl3-based gas plasma was investigated. The surface morphology, etch rate, selectivity and sidewall angle have been studied as a function of pressure, gas flow rate, bias power and ICP power. Nickel was used as an etch mask. It is shown that compared with C2F6 and BCl3-based gas mixtures. C2F6 gas were obtained in high etch rate of 410nm/min, vertical sidewall and smooth surface. In the case of BCl3 Mesas with smooth surface and vertical sidewall were obtained at low bias conditions with a reasonable etch rate of 120nm/min. Efforts to increase the etch rate by increasing the ICP power or the bias power resulted in the trenching effect. As a result of C2F6-based gas were obtained etch rate higher than using BCl3-based gas mixtures. |
