| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
B. Nanomaterials and Processing Technology((나노소재기술) |
| 제목 |
The effects of RF power on remote plasma atomic layer deposited Al2O3 passivation layer to improve the electrical stability of IGZO TFTs |
| 초록 |
Recently, the transparent electronics have a considerable attention for the next generation display. To realize the transparent electronics, the reliable characteristics of thin film transistor (TFT), used as a fundamental operation unit, are indispensable. Therefore, the oxide based-TFTs have been extensively investigated as the solution of transparent TFTs due to their excellent electrical and optical characteristics. In particular, amorphous indium–gallium–zinc oxide (a-IGZO) TFTs have shown excellent electrical properties such as high mobility and excellent on/off ratio, which make these transistors promising alternatives to amorphous silicon (a-Si) TFTs, especially in a backplane application of active-matrix organic light emitting diode displays. However, there is the problem regarding electrical instability of IGZO TFT although a-IGZO TFTs have the potential advantages. In order to improve the stability and the electrical properties, the passivation process has been widely used. Especially, the passivation process for the bottom gate-type TFTs is important for the environmental and electrical stability in order to prevent the active layer from being exposed. Recently, aluminum oxide (Al2O3) has been mostly used as a surface passivation material. However, during the deposition of the Al2O3 passivation layer, the active layer, a-IGZO, could react with Al2O3, leading to the change in characteristics of a-IGZO TFTs. For the deposition of a superior quality Al2O3 film, the remote plasma ALD method was chosen due to the fact that plasma could increase the chemical reactivity of TMA with radicals and ions in O2 plasma. Furthermore this method can also minimize the plasma-induced substrate damage because the plasma is generated in a separate reactor. In this study, we used ALD process to ensure thin and uniform film as a passivation layer. We compared the effect on the electrical characteristics and stabilities of Al2O3 passivated TFTs with the variation of RF power of ALD deposition. |
| 저자 |
Youngbin Ko1, Seokhwan Bang2, Seungjun Lee1, Joohyun Park2, Hagyoung Choi1, Jaehun Ryu2, Kiyeol Ham1, Seokyoon Shin2, Jihoon Kim1, Hyeongtag Jeon2
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| 소속 |
1Division of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 |
Al2O3; passivation; remote plasma ALD; IGZO; TFT
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| E-Mail |
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