| 학회 | 한국재료학회 |
| 학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 | 17권 2호 |
| 발표분야 | F. Display and optic Materials and processing(디스플레이 및 광재료) |
| 제목 | The study on H2 plasma treatment effect in IGZO thin film transistor |
| 초록 | Recently, IGZO(Indium-Gallium-zinc-oxide) based thin film transistor (TFT) have been emerged as promising solution for high performance backplane in next generation display due to their high mobility, optical transparency, excellent uniformity compared to conventional amorphous Si and polycrystalline Si TFT. To improve the performance of practical IGZO applications, most studies focused on adjusting process variables such as gas partial pressure, chemical components of IGZO, contact resistance, and different plasma treatment. Among them, the hydrogen plasma treatment has been reported to control in conductivity of IGZO films. Because hydrogen can contribute to increase the number of shallow state donor in band gap and is expected to improve electrical property. Additionally, it is reported that the hydrogen-induced passivation of interface trap states between IGZO and dielectric layer is responsible for the improvement of subthresold swing. In this study, we will demonstrate the effects of hydrogen dosing quantity on the electrical stability under positive bias stress condition. We will investigate the subthresold drain current by increasing temperature. As experimental procedure, P-type Si substrates with 100 nm SiO2 deposited were used as substrates for TFT fabrication. A 70 nm-thick IGZO film as an active layer was deposited using RF plasma sputtering. Source/drain electrodes comprised of Ti/Au (30/40 nm) were deposited by an e-beam evaporator. Hydrogen treatment is conducted by H2 plasma treatment of 30, 60 and 90s, respectively using remote plasma. And then passivation layer of 50nm Al2O3 was deposited by remote plasma atomic layer deposition. According to H2 plasma treatment time, there are shown to change transfer curve and the reaction of positive bias stress. More detailed chemical/physical results will be discussed and presented. |
| 저자 | 김지훈, 방석환, 이승준, 박주현, 고영빈, 최학영, 신석윤, 함기열, 이상헌, 전형탁 |
| 소속 | 한양대 |
| 키워드 | IGZO; hydrogen; thin film transistor |
