| 학회 | 한국공업화학회 |
| 학술대회 | 2004년 가을 (10/29 ~ 10/30, 호서대학교(아산캠퍼스)) |
| 권호 | 8권 2호 |
| 발표분야 | 정보,전자소재 |
| 제목 | Numerical Analysis of Capacitively Coupled Plasma Driven by Dual RF Power Sources |
| 초록 | Plasma density and ion bombardment energy are important factors affecting the performance of plasma process utilized in the fabrication of electronic materials. They need to be independently controlled by an appropriate combination of excitation frequency and rf power. Capacitively coupled plasma driven by dual rf power sources is considered to fulfil such a requirement. This study investigate the effects of phase differences between excitation voltage waves simultaneously imposed, through blocking capacitors, on primary and secondary electrodes at the various combinations of commensurate frequencies through self-consistent simulations of a three-moment plasma model. The simulation results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulations. This work is financially sponsored by Korean Science and Engineering Foundation (KOSEF) through Semiconductor Equipment Research Center (SERC) in Hoseo University. |
| 저자 | 김헌창, 황일선 |
| 소속 | 호서대 |
| 키워드 | plasma; simulation; ccp; dual frequency |
