| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.923 |
| 발표분야 |
재료 |
| 제목 |
Electrical properties of molybdenum disulfide thin film grown by atomic layer deposition |
| 초록 |
Recently MoS2 has attracted great attention for electronic and catalyst applications. Here we report MoS2 thin films grown by atomic layer deposition (ALD) using molybdenum hexacarbonyl and dimethyl disulfide as Mo and S precursors, respectrively. The as-grown MoS2 thin films are amorphous, because of the low growth temperature of 100℃. However, the films can be crystallized to have the layered structure parallel to the substrate by annealing at 900℃ under Ar or H2S atmosphere. Raman spectra of MoS2 films show the typical Raman modes (E12g and A1g) of 2H-MoS2 with a trigonal prismatic arrangement of S-Mo-S. Electrical properties such as conductivity and activation energy for conduction are characterized, and its diode performance is discussed on a heterojunction of n-MoS2/p-Si structure. |
| 저자 |
신석희, Zhenyu Jin, 한승주, Ranjith Bose, 고동현, 민요셉
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| 소속 |
건국대 |
| 키워드 |
atomic layer deposition; MoS2; molybdenum disulfide
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| E-Mail |
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| 원문파일 |
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