| 학회 |
한국화학공학회 |
| 학술대회 |
2013년 가을 (10/23 ~ 10/25, 대구 EXCO) |
| 권호 |
19권 2호, p.1838 |
| 발표분야 |
이동현상 |
| 제목 |
3D feature profile simulation of mask effects in high aspect contact hole etch process |
| 초록 |
Recently, one of the critical issues in the etching processes of the nano-scale devices is to achieve ultra-high deep contact hole without anomalous behaviors such as sidewall bowing, and twisting profile. As an effort to address this issue, we have developed a 3D feature profile simulator coupled with well-defined plasma-surface kinetic model for silicon dioxide etching process under fluorocarbon plasmas. The 3D feature profile simulator developed in our group consists of multiple level set based moving algorithm, and ballistic transport module.In this work, effects of mask etching are mainly investigated for high aspect ratio contact hole etch process. For realistic mask etch simulation, we developed typical surface reaction model including mask sputtering and polymer passivation and incorporated it into multiple level set algorithm. Finally, it is demonstrated that high aspect contact hole etch profilecan be strongly affected by mask etching shapes such as necking and bowing. |
| 저자 |
천푸름1, 이세아1, 육영근1, 최광성1, 조덕균1, 유동훈2, 장원석3, 임연호1
|
| 소속 |
1전북대, 2경원테크, 3국가핵융합(연) |
| 키워드 |
GPU; 3D feature profile simulation; high-aspect ratio contact hole; fluorocarbon plasmas
|
| E-Mail |
|
| 원문파일 |
초록 보기 |
