| 초록 |
La2O3 thin films were grown on the TiN substrates at 300℃ by atomic layer deposition (ALD) technique using lanthanum 2,2,6,6-tetramethyl- 3,5-heptanedione [La(TMHD)3] and H2O as precursors. The structural and the electrical properties of the grown films were investigated by AFM, TEM, XPS, XRD, I-V, and C-V measurements. When the as-grown La2O3 thin films were annealed at various temperatures in N2 ambient, the electrical properties were dramatically improved. In the metal-insulator-metal (MIM) capacitors with La2O3 thin films post-annealed at 500℃, the dielectric constant was 17.3 and the leakage current densities were 2.78 × 10-10 and 2.1 × 10-8 A/cm2 at +1 V and –1 V, respectively. |
