| 1 |
Observation of fast positron diffraction from a Si(111)7x7 surface
Kawasuso A, Fukaya Y, Hayashi K, Maekawa M, Ishimoto T, Okada S, Ichimiya A
Materials Science Forum, 445-6, 385, 2004 |
| 2 |
Hydrogen adsorption and desorption on silicon revisited
Hilf MF, Brenig W
Journal of Chemical Physics, 112(7), 3113, 2000 |
| 3 |
Effect of illumination on the preferred oxygen initial adsorption sites at a Si(111)7x7 surface
Gorelik D, Haase G
Journal of Physical Chemistry B, 104(12), 2575, 2000 |
| 4 |
Surface diffusion of adsorbed Si atoms on the Si(111)7x7 surface studied by atom-tracking scanning tunneling microscopy
Sato T, Kitamura S, Iwatsuki M
Journal of Vacuum Science & Technology A, 18(3), 960, 2000 |
| 5 |
Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl-2
Materer N, Goodman RS, Leone SR
Journal of Vacuum Science & Technology B, 18(1), 191, 2000 |
| 6 |
Dissociative adsorption of silane on the Si(100)-(2x1) surface
Brown AR, Doren DJ
Journal of Chemical Physics, 110(5), 2643, 1999 |
| 7 |
Atomically resolved adsorption and scanning tunneling microscope induced desorption on a semiconductor: NO on Si(111)-(7X7)
Rezaei MA, Stipe BC, Ho W
Journal of Chemical Physics, 110(10), 4891, 1999 |
| 8 |
Morphological and compositional evolution of Pt-Si intermetallic thin films prepared by the activated adsorption of SiH4 on Pt(111)
Bondos JC, Gewirth AA, Nuzzo RG
Journal of Physical Chemistry B, 103(16), 3099, 1999 |
| 9 |
Surface chemistry - Reactions on semiconductor surfaces
Ruda HE
Science, 283(5402), 646, 1999 |
| 10 |
In situ observation of a high-temperature Si(001) surface during SiH2Cl2 exposure by photoelectron spectroscopy
Hori T, Sakamoto H, Takakuwa Y, Enta Y, Kato H, Miyamoto N
Thin Solid Films, 343-344, 354, 1999 |
