검색결과 : 35건
| No. | Article |
|---|---|
| 1 |
Modeling the impact of junction angles in tunnel field-effect transistors Kao KH, Verhulst AS, Vandenberghe WG, Soree B, Groeseneken G, De Meyer K Solid-State Electronics, 69, 31, 2012 |
| 2 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs Eneman G, Collaert N, Veloso A, De Keersgieter A, De Meyer K, Hoffmann TY, Horiguchi N, Thean A Solid-State Electronics, 74, 19, 2012 |
| 3 |
Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations Nazir A, Eyben P, Clarysse T, Hellings G, Schulze A, Mody J, De Meyer K, Bender H, Vandervorst W Solid-State Electronics, 74, 38, 2012 |
| 4 |
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K Thin Solid Films, 520(8), 3326, 2012 |
| 5 |
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition You SZ, Decoutere S, Nguyen ND, Van Huylenbroeck S, Sibaja-Hernandez A, Venegas R, Loo R, De Meyer K Thin Solid Films, 520(8), 3345, 2012 |
| 6 |
Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing Hellings G, Rosseel E, Simoen E, Radisic D, Petersen DH, Hansen O, Nielsen PF, Zschatzsch G, Nazir A, Clarysse T, Vandervorst W, Hoffmann TY, De Meyer K Electrochemical and Solid State Letters, 14(1), II39, 2011 |
| 7 |
Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs You SZ, Decoutere S, Sibaja-Hernandez A, Venegas R, Van Huylenbroeck S, De Meyer K Solid-State Electronics, 61(1), 81, 2011 |
| 8 |
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang XS, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A Solid-State Electronics, 63(1), 14, 2011 |
| 9 |
Half-terahertz silicon/germanium heterojunction bipolar technologies: A TCAD based device architecture exploration Sibaja-Hernandez A, You SZ, Van Huylenbroeck S, Venegas R, De Meyer K, Decoutere S Solid-State Electronics, 65-66, 72, 2011 |
| 10 |
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J Solid-State Electronics, 65-66, 177, 2011 |