검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Correlation between barrier inhomogeneities of 4H-SiC 1 A/600 V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS Gelczuk L, Kamyczek P, Placzek-Popko E, Dabrowska-Szata M Solid-State Electronics, 99, 1, 2014 |
| 2 |
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode Peta KR, Park BG, Lee ST, Kim MD, Oh JE, Kim TG, Reddy VR Thin Solid Films, 534, 603, 2013 |
| 3 |
Synthesis of ZnTe nanowires onto TiO2 nanotubular arrays by pulse-reverse electrodeposition Gandhi T, Raja KS, Misra M Thin Solid Films, 517(16), 4527, 2009 |
| 4 |
Investigation of deep level defects in copper irradiated bipolar junction transistor Madhu KV, Kumar R, Ravindra M, Damle R Solid-State Electronics, 52(8), 1237, 2008 |
| 5 |
Thermal stability, phase and interface uniformity of Ni-silicide formed by Ni-Si solid-state reaction Qu XP, Jiang YL, Ru GP, Lu F, Li BZ, Detavernier C, Van Meirhaeghe RL Thin Solid Films, 462-63, 146, 2004 |
| 6 |
Low-energy proton-induced defects in n(+)/p InGaP solar cells Dharmarasu N, Yamaguchi M, Khan A, Takamoto T, Ohshima T, Itoh H, Imaizumi M, Matsuda S Solar Energy Materials and Solar Cells, 75(1-2), 327, 2003 |
| 7 |
Electronic structure of the UD3 defect in 4H-and 6H-SiC Wagner M, Magnusson B, Chen WM, Janzen E Materials Science Forum, 389-3, 509, 2002 |