검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Investigation of water-based and oil-based ferrofluids with a new magnetorheological cell: effect of the microstructure Galindo-Gonzalez C, Ponton A, Bee A, Chevalet J, Talbot D, Perzynski R, Dubois E Rheologica Acta, 55(1), 67, 2016 |
| 2 |
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes Niebojewski H, Le Royer C, Morand Y, Rozeau O, Jaud MA, Dubois E, Poiroux T, Bensahel D Solid-State Electronics, 97, 45, 2014 |
| 3 |
Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics des Etangs-Levallois AL, Lesecq M, Danneville F, Tagro Y, Lepilliet S, Hoel V, Troadec D, Gloria D, Raynaud C, Dubois E Solid-State Electronics, 90, 73, 2013 |
| 4 |
Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer Reckinger N, Dutu CA, Tang X, Dubois E, Yarekha DA, Godey S, Nougaret L, Laszcz A, Ratajczak J, Raskin JP Thin Solid Films, 520(13), 4501, 2012 |
| 5 |
Erbium Silicide Growth in the Presence of Residual Oxygen Reckinger N, Tang XH, Godey S, Dubois E, Laszcz A, Ratajczak J, Vlad A, Dutu CA, Raskin JP Journal of the Electrochemical Society, 158(7), H715, 2011 |
| 6 |
Superparamagnetic relaxation evidences large surface contribution for the magnetic anisotropy of MnFe(2)0(4) nanoparticles of ferrofluids Alves CR, Aquino R, Depeyrot J, Tourinho FA, Dubois E, Perzynski R Journal of Materials Science, 42(7), 2297, 2007 |
| 7 |
Transformation of hydrogen silsesquioxane properties with RIE plasma treatment for advanced multiple-gate MOSFETs Penaud J, Fruleux F, Dubois E Applied Surface Science, 253(1), 395, 2006 |
| 8 |
Diffusion of water in clays on the microscopic scale: Modeling and experiment Malikova N, Cadene A, Marry V, Dubois E, Turq P Journal of Physical Chemistry B, 110(7), 3206, 2006 |
| 9 |
What tunes the structural anisotropy of magnetic fluids under a magnetic field? Meriguet G, Cousin F, Dubois E, Boue F, Cebers A, Farago B, Perzynski W Journal of Physical Chemistry B, 110(9), 4378, 2006 |
| 10 |
Reactive ion etching of a 20 nanometers tungsten gate using a SF6/N-2 chemistry and hydrogen silsesquioxane hard mask resist Larrieu G, Dubois E Journal of Vacuum Science & Technology B, 23(5), 2046, 2005 |