검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Integration aspects of strained Ge pFETs Witters L, Eneman G, Mitard J, Vincent B, Hikavyy A, Milenin AP, Mertens S, Thean A, Collaert N Solid-State Electronics, 98, 7, 2014 |
| 2 |
On the efficiency of stress techniques in gate-last n-type bulk FinFETs Eneman G, Collaert N, Veloso A, De Keersgieter A, De Meyer K, Hoffmann TY, Horiguchi N, Thean A Solid-State Electronics, 74, 19, 2012 |
| 3 |
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures Hellings G, Hikavyy A, Mitard J, Witters L, Benbakhti B, Alian A, Waldron N, Bender H, Eneman G, Krom R, Schulze A, Vandervorst W, Loo R, Heyns M, Meuris M, Hoffmann T, De Meyer K Thin Solid Films, 520(8), 3326, 2012 |
| 4 |
High Doping Density/High Electric Field, Stress and Heterojunction Effects on the Characteristics of CMOS Compatible p-n Junctions Simoen E, Eneman G, Gonzalez MB, Kobayashi D, Rodriguez AL, Tejada JAJ, Claeys C Journal of the Electrochemical Society, 158(5), R27, 2011 |
| 5 |
Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions Gonzalez MB, Eneman G, Wang G, Jaeger B, Simoen E, Claeys C Journal of the Electrochemical Society, 158(10), H955, 2011 |
| 6 |
Ge1-xSnx stressors for strained-Ge CMOS Takeuchi S, Shimura Y, Nishimura T, Vincent B, Eneman G, Clarysse T, Demeulemeester J, Vantomme A, Dekoster J, Caymax M, Loo R, Sakai A, Nakatsuka O, Zaima S Solid-State Electronics, 60(1), 53, 2011 |
| 7 |
Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach Benbakhti B, Chan K, Towie E, Kalna K, Riddet C, Wang XS, Eneman G, Hellings G, De Meyer K, Meuris M, Asenov A Solid-State Electronics, 63(1), 14, 2011 |
| 8 |
Extended-Defect Aspects of Ge-on-Si Materials and Devices Simoen E, Eneman G, Wang G, Souriau L, Loo R, Caymax M, Claeys C Journal of the Electrochemical Society, 157(2), R1, 2010 |
| 9 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
| 10 |
Si versus Ge for future microelectronics Claeys C, Mitard J, Eneman G, Meuris M, Simon E Thin Solid Films, 518(9), 2301, 2010 |