검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parameters Cristoloveanu S, Lee KH, Parihar MS, El Dirani H, Lacord J, Martinie S, Le Royer C, Barbe JC, Mescot X, Fonteneau P, Galy P, Gamiz F, Navarro C, Cheng B, Duan M, Adamu-Lema F, Asenov A, Taur Y, Xu Y, Kim YT, Wan J, Bawedin M Solid-State Electronics, 143, 10, 2018 |
| 2 |
Sharp-switching band-modulation back-gated devices in advanced FDSOI technology El Dirani H, Fonteneau P, Solaro Y, Legrand CA, Marin-Cudraz D, Ferrari P, Cristoloveanu S Solid-State Electronics, 128, 180, 2017 |
| 3 |
Properties and mechanisms of Z(2)-FET at variable temperature El Dirani H, Solaro Y, Fonteneau P, Ferrari P, Cristoloveanu S Solid-State Electronics, 115, 201, 2016 |
| 4 |
A sharp-switching device with free surface and buried gates based on band modulation and feedback mechanisms Solaro Y, Fonteneau P, Legrand CA, Fenouillet-Beranger C, Ferrari P, Cristoloveanu S Solid-State Electronics, 116, 8, 2016 |
| 5 |
A band-modulation device in advanced FDSOI technology: Sharp switching characteristics El Dirani H, Solaro Y, Fonteneau P, Legrand CA, Marin-Cudraz D, Golanski D, Ferrari P, Cristoloveanu S Solid-State Electronics, 125, 103, 2016 |
| 6 |
Z(2)-FET: A promising FDSOI device for ESD protection Solaro Y, Wan J, Fonteneau P, Fenouillet-Beranger C, Le Royer B, Zaslavsky A, Ferrari P, Cristoloveanu S Solid-State Electronics, 97, 23, 2014 |
| 7 |
Combined scanning tunneling microscopy and photoemission studies of the beta-SiC(100) c(4x2) surface reconstruction Derycke V, Fonteneau P, Aristov VY, Enriquez H, Soukiassian P Materials Science Forum, 353-356, 235, 2001 |
| 8 |
Self-organized 1D nanostructures on the beta-SiC(100) surface: silicon atomic lines and dimer vacancy chains Derycke V, Pham NP, Fonteneau P, Soukiassian P, Aboulet-Nze P, Monteil Y, Mayne AJ, Dujardin G, Gautier J Applied Surface Science, 162, 413, 2000 |