검색결과 : 63건
| No. | Article |
|---|---|
| 1 |
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ, Houston PA Journal of Crystal Growth, 459, 185, 2017 |
| 2 |
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources Novikov SV, Foxon CT Journal of Crystal Growth, 477, 154, 2017 |
| 3 |
Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT Journal of Crystal Growth, 456, 151, 2016 |
| 4 |
Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy Svensson SP, Sarney WL, Yu KM, Ting M, Calley WL, Novikov SV, Foxon CT, Walukiewicz W Journal of Crystal Growth, 425, 2, 2015 |
| 5 |
Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers Novikov SV, Staddon CR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 425, 125, 2015 |
| 6 |
Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M, Foxon CT Journal of Crystal Growth, 425, 255, 2015 |
| 7 |
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D Journal of Crystal Growth, 386, 135, 2014 |
| 8 |
Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy Novikov SV, Powell REL, Staddon CR, Kent AJ, Foxon CT Journal of Crystal Growth, 403, 43, 2014 |
| 9 |
Tellurium n-type doping of highly mismatched amorphous GaNi1-xAsx alloys in plasma-assisted molecular beam epitaxy Novikov SV, Ting M, Yu KM, Sarney WL, Martin RW, Svensson SP, Walukiewicz W, Foxon CT Journal of Crystal Growth, 404, 9, 2014 |
| 10 |
Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy Lee SC, Ng SS, Abu Hassan H, Hassan Z, Zainal N, Novikov SV, Foxon CT, Kent AJ Materials Chemistry and Physics, 146(1-2), 121, 2014 |