화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy
Ohta M, Miyamoto T, Kageyama T, Matsuura T, Matsui Y, Furuhata T, Koyama F
Journal of Crystal Growth, 278(1-4), 521, 2005
2 Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers
Schlenker D, Miyamoto T, Chen Z, Koyama F, Iga K
Journal of Crystal Growth, 209(1), 27, 2000
3 Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells
Schlenker D, Miyamoto T, Chen ZB, Kawaguchi M, Kondo T, Gouardes E, Koyama F, Iga K
Journal of Crystal Growth, 221, 503, 2000