| 1 |
Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
Lu Q, Beanland R, Montesdeoca D, Carrington PJ, Marshall A, Krier A
Solar Energy Materials and Solar Cells, 191, 406, 2019 |
| 2 |
Enhanced low-gap thermophotovoltaic cell efficiency for a wide temperature range based on a selective meta-material emitter
Bendelala F, Cheknane A, Hilal H
Solar Energy, 174, 1053, 2018 |
| 3 |
Suppression of the surface'' dead region'' for fabrication of GaInAsSb thermophotovoltaic cells
Tang LL, Xu C, Liu ZM, Lu Q, Marshall A, Krier A
Solar Energy Materials and Solar Cells, 163, 263, 2017 |
| 4 |
Evaluation of Schottky junction parameters from current-voltage characteristics exhibiting large excess currents
Horvath ZJ
Applied Surface Science, 255(3), 743, 2008 |
| 5 |
Growth and carrier dynamics in type II band alignment GaInAsSb/GaSb quantum well structure
Edamura T, Kan H
Thin Solid Films, 515(18), 7286, 2007 |
| 6 |
Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy
Ohta M, Miyamoto T, Kageyama T, Matsuura T, Matsui Y, Furuhata T, Koyama F
Journal of Crystal Growth, 278(1-4), 521, 2005 |
| 7 |
Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices
Wang CA, Shiau DA, Calawa DR
Journal of Crystal Growth, 261(2-3), 372, 2004 |
| 8 |
Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts
Wang CA, Shiau DA, Huang RK, Harris CT, Connors MK
Journal of Crystal Growth, 261(2-3), 379, 2004 |
| 9 |
Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy
Wang CA, Shiau DA, Lin A
Journal of Crystal Growth, 261(2-3), 385, 2004 |
| 10 |
Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy
Wang CA
Journal of Crystal Growth, 272(1-4), 664, 2004 |
