검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD Claudel A, Blanquet E, Chaussende D, Audier M, Pique D, Pons M Journal of Crystal Growth, 311(13), 3371, 2009 |
| 2 |
Observation of vacancy clusters in HTCVD grown SiC Aavikko R, Saarinen K, Magnusson B, Janzen E Materials Science Forum, 483, 469, 2005 |
| 3 |
SiC crystal growth by HTCVD Ellison A, Magnusson B, Sundqvist B, Pozina G, Bergman JP, Janzen E, Vehanen A Materials Science Forum, 457-460, 9, 2004 |
| 4 |
Comparison between various chemical systems for the CVD step in the CF-PVT crystal growth method Auvray L, Chaussende D, Baillet F, Charpentier L, Pons M, Madar R Materials Science Forum, 457-460, 135, 2004 |
| 5 |
Electrical characterization of high-voltage 4H-SiC diodes on high-temperature CVD-grown epitaxial layers Zimmermann U, Osterman J, Zhang J, Henry A, Hallen A Materials Science Forum, 389-3, 1285, 2002 |
| 6 |
Influence of semi-insulating substrate purity on the output characteristics of 4H-SiC MESFETs Sghaier N, Bluet JM, Souifi A, Guillot G, Morvan E, Brylinski C Materials Science Forum, 389-3, 1363, 2002 |
| 7 |
Growth of high quality p-type 4H-SiC substrates by HTCVD Sundqvist B, Ellison A, Jonsson A, Henry A, Hallin C, Bergman JP, Magnusson B, Janzen E Materials Science Forum, 433-4, 21, 2002 |
| 8 |
Towards a continuous feeding of the PVT growth process: an experimental investigation Chaussende D, Baillet F, Charpentier L, Pernot E, Pons M, Madar R Materials Science Forum, 433-4, 25, 2002 |
| 9 |
HTCVD grown semi-insulating SiC substrates Ellison A, Magnusson B, Son NT, Storasta L, Janzen E Materials Science Forum, 433-4, 33, 2002 |
| 10 |
Fast SiC epitaxial growth in a chimney CVD reactor and HTCVD crystal growth developments Ellison A, Zhang J, Magnusson W, Henry A, Wahab Q, Bergman JP, Hemmingsson C, Son NT, Janzen E Materials Science Forum, 338-3, 131, 2000 |