검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs Karatsori TA, Theodorou CG, Haendler S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 128, 31, 2017 |
| 2 |
Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 117, 88, 2016 |
| 3 |
Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs Ioannidis EG, Haendler S, Josse E, Planes N, Ghibaudo G Solid-State Electronics, 118, 4, 2016 |
| 4 |
Sub-threshold 10T SRAM bit cell with read/write XY selection Feki A, Allard B, Turgis D, Lafont JC, Drissi FT, Abouzeid F, Haendler S Solid-State Electronics, 106, 1, 2015 |
| 5 |
Dynamic variability in 14 nm FD-SOI MOSFETs and transient simulation methodology Theodorou CG, Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 111, 100, 2015 |
| 6 |
Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction Karatsori TA, Theodorou CG, Ioannidis EG, Haendler S, Josse E, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 111, 123, 2015 |
| 7 |
Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5 mu m down to 20 nm Ioannidis EG, Haendler S, Theodorou CG, Lasserre S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 95, 28, 2014 |
| 8 |
Characterization and modeling of low frequency noise in CMOS inverters Ioannidis EG, Haendler S, Dimitriadis CA, Ghibaudo G Solid-State Electronics, 81, 151, 2013 |
| 9 |
Unexpected impact of germanium content in SiGe bulk PMOSFETs Diouf C, Cros A, Soussou A, Rideau D, Haendler S, Rosa J, Ghibaudo G Solid-State Electronics, 86, 45, 2013 |
| 10 |
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology Fenouillet-Beranger C, Perreau P, Benoist T, Richier C, Haendler S, Pradelle J, Bustos J, Brun P, Tosti L, Weber O, Andrieu F, Orlando B, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gregoire M, Ducote J, Gouraud P, Margain A, Borowiak C, Bianchini R, Planes N, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Boeuf F Solid-State Electronics, 88, 15, 2013 |