화학공학소재연구정보센터
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No. Article
1 Schottky barriers for Pt on 6H-and 4H-SiC (0001), (000(1)over-bar), (1(1)over-bar00) and (1(2)over-bar10) faces measured by I-V, C-V and internal photoemission
Shigiltchoff O, Kimoto T, Hobgood D, Neudeck PG, Porter LM, Devaty RP, Choyke WJ
Materials Science Forum, 389-3, 921, 2002
2 Schottky barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000(1)over-bar), (1(1)over-bar-00) and (1(2)over-bar-10) faces measured by I-V, C-V and internal photoemission
Shigiltchoff O, Bai S, Devaty RP, Choyke WJ, Kimoto T, Hobgood D, Neudeck PG, Porter LM
Materials Science Forum, 433-4, 705, 2002
3 Large diameter, low defect silicon carbide boule growth
Carter CH, Glass R, Brady M, Malta D, Henshall D, Muller S, Tsvetkov V, Hobgood D, Powell A
Materials Science Forum, 353-356, 3, 2001
4 Valence sand splittings of 15R SiC measured using wavelength modulated absorption spectroscopy
Devaty RP, Bai S, Choyke WJ, Hobgood D, Larkin DJ
Materials Science Forum, 353-356, 357, 2001
5 Status of large diameter SiC crystal growth for electronic and optical applications
Hobgood D, Brady M, Brixius W, Fechko G, Glass R, Henshall D, Jenny J, Leonard R, Malta D, Muller S, Tsvetkov V, Carter C
Materials Science Forum, 338-3, 3, 2000