화학공학소재연구정보센터
검색결과 : 21건
No. Article
1 Crt10 directs the cullin-E3 ligase Rtt101 to nonfunctional 25S rRNA decay
Sakata T, Fujii K, Ohno M, Kitabatake M
Biochemical and Biophysical Research Communications, 457(1), 90, 2015
2 Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy
Yamashita T, Matsuhata H, Sekiguchi T, Momose K, Osawa H, Kitabatake M
Journal of Crystal Growth, 416, 142, 2015
3 Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals
Ohtani N, Ohshige C, Katsuno M, Fujimoto T, Sato S, Tsuge H, Ohashi W, Yano T, Matsuhata H, Kitabatake M
Journal of Crystal Growth, 386, 9, 2014
4 Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [11(2)over-bar0] direction
Ohshige C, Takahashi T, Ohtani N, Katsuno M, Fujimoto T, Sato S, Tsuge H, Yano T, Matsuhata H, Kitabatake M
Journal of Crystal Growth, 408, 1, 2014
5 Formation of SiC delta-doped-layer structures by CVD
Takahashi K, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 457-460, 743, 2004
6 Surface morphology of SiC epitaxial layers grown by vertical hot-wall type CVD
Takahashi K, Uchida M, Yokogawa T, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 389-3, 243, 2002
7 Delta-doped layers of SiC grown by'pulse doping' technique
Takahashi K, Yokogawa T, Uchida M, Kusumoto O, Yamashita K, Miyanaga R, Kitabatake M
Materials Science Forum, 389-3, 247, 2002
8 SIMS analyses of SiO2/4H-SiC(0001) interface
Yamashita K, Kitabatake M, Kusumoto P, Takahashi K, Uchida M, Miyanaga R, Itoh H, Yoshikawa M
Materials Science Forum, 389-3, 1037, 2002
9 4H-SiC delta-doped accumulation-channel MOS FET
Yokogawa T, Takahashi K, Kusumoto O, Uchida M, Yamashita K, Kitabatake M
Materials Science Forum, 389-3, 1077, 2002
10 SiC vertical DACFET (Vertical delta-doped accumulation channel MOSFET)
Kusumoto O, Yokogawa T, Yamashita K, Takahashi K, Kitabatake M, Uchida M, Miyanaga R
Materials Science Forum, 389-3, 1211, 2002