화학공학소재연구정보센터
검색결과 : 39건
No. Article
1 State memory in solution gated epitaxial graphene
Butko AV, Butko VY, Lebedev SP, Lebedev AA, Davydov VY, Smirnov AN, Eliseyev IA, Dunaevskiy MS, Kumzerov YA
Applied Surface Science, 444, 36, 2018
2 A study of the intermediate layer in 3C-SiC/6H-SiC heterostructures
Lebedev AA, Zamoryanskaya MV, Davydov SY, Kirilenko DA, Lebedev SP, Sorokin LM, Shustov DB, Shcheglov MP
Journal of Crystal Growth, 396, 100, 2014
3 Investigation of n-GaN/p-SiC/n-SiC heterostructures
Lebedev AA, Ledyaev OY, Strel'chuk AM, Kuznetsov AN, Nikolaev AE, Zubrilov AS, Volkova AA
Journal of Crystal Growth, 300(1), 239, 2007
4 Strategic priorities of the Russian oil and gas complex
Levinbuk MI, Netesanov SD, Lebedev AA, Borodacheva AV, Sizova EV
Petroleum Chemistry, 47(4), 230, 2007
5 Direct experimental comparison of the effects of electron irradiation on the charge carrier removal rate in n-type silicon and silicon carbide
Kozlovski VV, Bogdanova EV, Emtsev VV, Emtsev KV, Lebedev AA, Lomasov VN
Materials Science Forum, 483, 385, 2005
6 Wannier-Stark Localization Effects in 6H-SiC JFETs
Sankin VI, Shkrebiy PP, Lebedev AA
Materials Science Forum, 483, 873, 2005
7 Influence of irradiation on excess currents in SiC pn structures
Stre'chuk AM, Kozlovski VV, Lebedev AA, Smirnova NY
Materials Science Forum, 483, 1001, 2005
8 Investigation of the SiC transistor and diode nuclear detectors at 8 MeV proton irradiation
Strokan NB, Ivanov AM, Savkina NS, Lebedev AA, Kozlovski VV, Syvajarvi M, Yakimova R
Materials Science Forum, 483, 1025, 2005
9 Simple model for calculation of SiC epitaxial layers growth rate in vacuum.
Davydov SY, Savkina NS, Lebedev AA, Syvajarvi M, Yakimova R
Materials Science Forum, 457-460, 249, 2004
10 X-ray imaging and TEM study of micropipes related to their propagation through porous SiC layer/SiC epilayer interface.
Argunova TS, Gutkin MY, Je JH, Sorokin LM, Mosina GN, Savkina NS, Shuman VB, Lebedev AA
Materials Science Forum, 457-460, 363, 2004