화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch
Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF
Journal of Crystal Growth, 464, 20, 2017
2 Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100)
McMahon WE, Warren EL, Kibbler AE, France RM, Norman AG, Reedy RC, Olson JM, Tamboli AC, Stradins P
Journal of Crystal Growth, 452, 235, 2016
3 Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy
Lin Y, Norman AG, McMahon WE, Moutinho HR, Jiang CS, Ptak AJ
Journal of Crystal Growth, 314(1), 298, 2011
4 Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces
Bork T, McMahon WE, Olson JM, Hannappel T
Journal of Crystal Growth, 298, 54, 2007
5 An RDS, LEED, and STM study of MOCVD-prepared Si(100) surfaces
Hannappel T, McMahon WE, Olson JM
Journal of Crystal Growth, 272(1-4), 24, 2004
6 Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors
Kurtz S, Reedy R, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
Journal of Crystal Growth, 234(2-3), 318, 2002
7 Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN
Kurtz S, Reedy R, Keyes B, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
Journal of Crystal Growth, 234(2-3), 323, 2002
8 A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces
McMahon WE, Olson JM
Journal of Crystal Growth, 225(2-4), 410, 2001