검색결과 : 8건
No. | Article |
---|---|
1 |
Reduced dislocation density in GaxIn1-xP compositionally graded buffer layers through engineered glide plane switch Schulte KL, France RM, McMahon WE, Norman AG, Guthrey HL, Geisz JF Journal of Crystal Growth, 464, 20, 2017 |
2 |
Surfaces and interfaces governing the OMVPE growth of APD-free GaP on AsH3-cleaned vicinal Si(100) McMahon WE, Warren EL, Kibbler AE, France RM, Norman AG, Reedy RC, Olson JM, Tamboli AC, Stradins P Journal of Crystal Growth, 452, 235, 2016 |
3 |
Effects of substrate orientation on aluminum grown on MgAl2O4 spinel using molecular beam epitaxy Lin Y, Norman AG, McMahon WE, Moutinho HR, Jiang CS, Ptak AJ Journal of Crystal Growth, 314(1), 298, 2011 |
4 |
Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces Bork T, McMahon WE, Olson JM, Hannappel T Journal of Crystal Growth, 298, 54, 2007 |
5 |
An RDS, LEED, and STM study of MOCVD-prepared Si(100) surfaces Hannappel T, McMahon WE, Olson JM Journal of Crystal Growth, 272(1-4), 24, 2004 |
6 |
Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors Kurtz S, Reedy R, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM Journal of Crystal Growth, 234(2-3), 318, 2002 |
7 |
Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN Kurtz S, Reedy R, Keyes B, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM Journal of Crystal Growth, 234(2-3), 323, 2002 |
8 |
A scanning tunneling microscopy study of As/Ge(mnn) and P/Ge(mnn) surfaces McMahon WE, Olson JM Journal of Crystal Growth, 225(2-4), 410, 2001 |