검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Investigation of a porous NiSi2/Si composite anode material used for lithium-ion batteries by X-ray absorption spectroscopy Zhou D, Jia HP, Rana J, Placke T, Klopsch R, Schumacher G, Winter M, Banhart J Journal of Power Sources, 324, 830, 2016 |
| 2 |
Synthesis of stable and metastable phases in the Ni-Si system by mechanical alloying Al-Joubori AA, Suryanarayana C Powder Technology, 302, 8, 2016 |
| 3 |
20 nm Gate length Schottky MOSFETs with ultra-thin NiSi/epitaxial NiSi2 source/drain Knoll L, Zhao QT, Luptak R, Trellenkamp S, Bourdelle KK, Mantl S Solid-State Electronics, 71, 88, 2012 |
| 4 |
Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application Chen YT, Chang TC, Lu J, Huang JJ, Yang PC, Chen SC, Chu AK, Huang HC, Gan DS, Ho NJ, Shi Y Thin Solid Films, 518(24), 7324, 2010 |
| 5 |
Metal nanocrystals as charge storage nodes for nonvolatile memory devices Yeh PH, Chen LJ, Liu PT, Wang DY, Chang TC Electrochimica Acta, 52(8), 2920, 2007 |
| 6 |
Passivation of Si(001) by the surfactant Sb and its influence on the NiSi2 growth Mogilatenko A, Falke M, Hortenbach H, Teichert S, Beddies G, Hinneberg HE Journal of Crystal Growth, 283(3-4), 303, 2005 |
| 7 |
NiSi2 ohmic contact to n-type 4H-SiC Nakamura T, Satoh M Materials Science Forum, 389-3, 889, 2002 |
| 8 |
Schottky barrier height of a new ohmic contact NiSi2 to n-type 6H-SiC Nakamura T, Satoh M Solid-State Electronics, 46(12), 2063, 2002 |
| 9 |
Diamond growth on polycrystalline nickel silicides Rey S, Hommet J, Schmerber G, Le Normand F Journal of Crystal Growth, 216(1-4), 225, 2000 |
| 10 |
Ohmic contact formation on n-type 6H-SiC using NiSi2 Nakamura T, Shimada H, Satoh M Materials Science Forum, 338-3, 985, 2000 |