화학공학소재연구정보센터
검색결과 : 20건
No. Article
1 Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
Vasiliauskas R, Marinova M, Syvajarvi M, Polychroniadis EK, Yakimova R
Journal of Crystal Growth, 395, 109, 2014
2 Stress relaxation phenomena in NiCuZn ferrites induced by annealing
Tsakaloudi V, Sakellari D, Zaspalis V, Polychroniadis EK
Journal of Materials Science, 48(10), 3692, 2013
3 Effect of initial substrate conditions on growth of cubic silicon carbide
Vasiliauskas R, Marinova M, Syvajarvi M, Liljedahl R, Zoulis G, Lorenzzi J, Ferro G, Juillaguet S, Camassel J, Polychroniadis EK, Yakimova R
Journal of Crystal Growth, 324(1), 7, 2011
4 Incorporation of group III, IV and V elements in 3C-SiC(111) layers grown by the vapour-liquid-solid mechanism
Lorenzzi J, Zoulis G, Marinova M, Kim-Hak O, Sun JW, Jegenyes N, Peyre H, Cauwet F, Chaudouet P, Soueidan M, Carole D, Camassel J, Polychroniadis EK, Ferro G
Journal of Crystal Growth, 312(23), 3443, 2010
5 Prospects for 3C-SiC bulk crystal growth
Chaussende D, Mercier F, Boulle A, Conchon F, Soueidan M, Ferro G, Mantzari A, Andreadou A, Polychroniadis EK, Balloud C, Juillaguet S, Camassel J, Pons M
Journal of Crystal Growth, 310(5), 976, 2008
6 Microstructural investigation of 3C-SiC islands grown by VLS mechanism on 6H-SiC substrate
Andreadou A, Soueidan M, Tsiaoussis I, Polychroniadis EK, Ferro G, Frangis N
Journal of Crystal Growth, 310(7-9), 1799, 2008
7 Microstructural phenomena controlling losses in NiCuZn-ferrites as studied by transmission electron microscopy
Sakellari D, Tsakaloudi V, Polychroniadis EK, Zaspalis V
Journal of the American Ceramic Society, 91(2), 366, 2008
8 Nanostructuring, compositional fluctuations, and atomic ordering in the thermoelectric materials AgPbmSbTe2+m. The myth of solid solutions
Quarez E, Hsu KF, Pcionek R, Frangis N, Polychroniadis EK, Kanatzidis MG
Journal of the American Chemical Society, 127(25), 9177, 2005
9 Is the Al solubility limit in SiC temperature dependent or not?
Jacquier C, Ferro G, Zielinski M, Polychroniadis EK, Andreadou A, Camassel J, Monteil Y
Materials Science Forum, 483, 125, 2005
10 Epitaxial SiC formation at the SiO2/Si interface by C+ implantation into SiO2 and subsequent annealing
Voelskow M, Panknin D, Polychroniadis EK, Ferro G, Godignion P, Mestres N, Skorupa W, Monteil Y, Stoemenos J
Materials Science Forum, 483, 233, 2005